Molecular beam epitaxial growth of ultrathin buried metal layers: (Al,Ga)As/NiAl/(Al,Ga)As heterostructures

Harbison, J. P.; Sands, T.; Tabatabaie, N.; Chan, W. K.; Florez, L. T.; Keramidas, V. G.
October 1988
Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1717
Academic Journal
We report the first growth of epitaxial NiAl metallic layers buried within monocrystalline GaAs/AlAs/NiAl/AlAs/GaAs heterostructures deposited entirely within a molecular beam epitaxy growth chamber. The layer growth sequence is monitored by reflection high-energy electron diffraction. Cross-sectional transmission electron microscopy shows that the metal layers and the III-V overgrowth are monocrystalline and of high quality. Thin, buried NiAl layers over the entire thickness range investigated (3–100 nm) are electrically continuous (69 μΩ cm at 3 nm). The heterostructures formed by this process can be used for the fabrication of thin-metal buried-layer devices utilizing ballistic transport or quantum mechanical tunneling across thin metal bases.


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