Excimer laser induced oxidation of ion-implanted silicon

Fogarassy, E.; White, C. W.; Slaoui, A.; Fuchs, C.; Siffert, P.; Pennycook, S. J.
October 1988
Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1720
Academic Journal
We have investigated laser-induced oxidation of ion-implanted Si using a repetitively pulsed ArF laser, working at low-energy density (100–500 mJ/cm2). Oxidation is observed at energy densities between the melt threshold and that required for epitaxial recrystallization of the amorphous layer. At these energy densities, oxidation is not observed on virgin silicon. The factors that influence the oxidation process are discussed.


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