Chemically controlled deep level formation and band bending at metal-CdTe interfaces

Shaw, J. L.; Viturro, R. E.; Brillson, L. J.; LaGraffe, D.
October 1988
Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1723
Academic Journal
We have used reactive metal interlayers to suppress anion outdiffusion at Au-CdTe junctions and thereby to alter the formation of deep interfacial states. Using soft x-ray photoemission and luminescence spectroscopies, we report a dramatically reduced p-type band bending and demonstrate that deep levels observed directly at the interface are responsible for the chemically induced electrical behavior.


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