TITLE

Hydrogen plasma induced defects in silicon

AUTHOR(S)
Jeng, S. J.; Oehrlein, G. S.; Scilla, G. J.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1735
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.
ACCESSION #
9828624

 

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