Hydrogen plasma induced defects in silicon

Jeng, S. J.; Oehrlein, G. S.; Scilla, G. J.
October 1988
Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1735
Academic Journal
The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.


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