TITLE

Surface-emitting, multiple quantum well GaAs/AlGaAs laser with wavelength-resonant periodic gain medium

AUTHOR(S)
Raja, M. Y. A.; Brueck, S. R. J.; Osinski, M.; Schaus, C. F.; McInerney, J. G.; Brennan, T. M.; Hammons, B. E.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1678
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel surface-emitting semiconductor laser with a vertical resonator, extremely short gain length, and enhanced gain at a specific design wavelength has been demonstrated. The gain medium consists of a series of GaAs quantum wells separated by AlGaAs spacers whose thicknesses are chosen to be one-half the wavelength of a particular transition in the quantum wells. This structure forces the antinodes of the standing-wave optical field to coincide with the gain elements, enhancing the gain and frequency selectivity in the vertical direction and substantially reducing amplified spontaneous emission. We have achieved optically pumped lasing with a threshold of 6 MW/cm2 at room temperature in a molecular beam epitaxially grown structure of thickness 4.3 μm, of which only 320 nm provided gain.
ACCESSION #
9828597

 

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