Low-temperature organometallic chemical vapor deposition of platinum

Chen, Yea-jer; Kaesz, Herbert D.; Thridandam, Hareesh; Hicks, Robert F.
October 1988
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1591
Academic Journal
Impurity-free, polycrystalline films of platinum have been grown by the decomposition of cyclopentadienyl platinum trimethyl, CpPtMe3, in hydrogen and a noble gas over silicon or glass substrates heated to 180 °C. The films contain less than 1 at. % of oxygen and carbon, and no other detectable impurities, as measured by x-ray photoelectron and Auger spectroscopies after argon ion sputtering. Sheet resistivities are 50% greater than sputter-deposited platinum.


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