Photoluminescence excitation spectroscopy of GaxIn1-xAsyP1-y/InP quantum wells

Montie, E. A.; Thijs, P. J. A.; ’t Hooft, G. W.
October 1988
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1611
Academic Journal
Photoluminescence excitation measurements were performed on GaxIn1-xAsyP1-y/InP single quantum wells. The results were analyzed with a k·p approach. Using the effective masses reported in the literature, the ratio of the discontinuities in the conduction and valence band is found to be 35:65. This is in good agreement with a ratio of 37:63, obtained directly from an observed transition involving free holes.


Related Articles

  • Patterned three-color ZnCdSe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters. Luo, Y.; Guo, S. P.; Guo, S.P.; Maksimov, O.; Tamargo, M. C.; Tamargo, M.C.; Asnin, V.; Pollak, F. H.; Pollak, F.H.; Chen, Y. C.; Chen, Y.C. // Applied Physics Letters;12/25/2000, Vol. 77 Issue 26 

    We report the growth and characterization of patterned ZnCdSe/ZnCdMgSe quantum-well (QW) structures grown adjacent to each other on a single InP substrate. Each structure emits at a different wavelength range spanning the visible range. Stripe and square-shaped QW structures of different...

  • Photoluminescence from In0.53Ga0.47As/InP quantum wells grown by molecular beam epitaxy. Marsh, J. H.; Roberts, J. S.; Claxton, P. A. // Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1161 

    Room-temperature and low-temperature photoluminescence from quantum well In0.53Ga0.47As/InP structures grown by molecular beam epitaxy is reported for the first time. A range of well thicknesses from 240 down to 10 Å was studied. Emission as short as 1.16 μm (1.07 eV) at 3.8 K and 1.22...

  • Atomic steps at GaInAs/InP interfaces grown by organometallic vapor phase epitaxy. Wang, T. Y.; Fry, K. L.; Persson, A.; Reihlen, E. H.; Stringfellow, G. B. // Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p290 

    InP/GaInAs/InP quantum well structures have been grown using atmospheric pressure organometallic vapor phase epitaxy (OMVPE). For thin wells the 10 K photoluminescence spectra show a clearly resolved doublet (or in some cases a triplet). The energy separation of the two peaks increase with...

  • Photoluminescence investigation of InGaAs-InP quantum wells. Moroni, D.; André, J. P.; Menu, E. P.; Gentric, Ph.; Patillon, J. N. // Journal of Applied Physics;9/1/1987, Vol. 62 Issue 5, p2003 

    Presents a study that examined the properties of indium gallium arsenide-indium phosphide single quantum wells using the photoluminescence (PL) technique. Growth conditions and experimental setup of the heterostructures; Characterization of nominally undoped n-type indium gallium arsenide bulk...

  • Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wells. Zhao, Y.-G.; Masut, R. A.; Brebner, J. L.; Tran, C. A.; Graham, J. T. // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p5921 

    Examines the temperature dependence of photoluminescence spectra of InAsP/indium phosphide strained multiple quantum wells. Experimental details; Calculation results; Conclusions.

  • Magnetophotoluminescence study of GaxIn1-xP quantum wells with CuPt-type long-range ordering. Shao, Jun; Lü, Xiang; Yue, Fangyu; Huang, Wei; Guo, Shaoling; Chu, Junhao // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p053522 

    Magnetophotoluminescence (PL) measurements are performed on GaxIn1-xP/AlGaInP quantum wells with CuPt-type long-range ordering. Curve-fitting and second-order derivative operations are conducted, respectively, on the PL spectra, and two different PL components are identified with an energetic...

  • Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells. Singh, S. D.; Dixit, V. K.; Porwal, S.; Kumar, Ravi; Srivastava, A. K.; Ganguli, Tapas; Sharma, T. K.; Oak, S. M. // Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p111912 

    The issue of type-II band alignment for InP/GaAs heterostructure is addressed by means of simple layer architecture of ultrathin quantum wells (QWs). From specific signatures of the radiative recombination in type-II QWs especially the cube root dependence of blueshift in the lowest excitonic...

  • Determination of diffusion lengths for intermixed quaternary quantum well with polarized edge-emitting photoluminescence. Xu, C. D.; Mei, T.; Dong, J. R. // Applied Physics Letters;5/7/2007, Vol. 90 Issue 19, p191111 

    Diffusion lengths of the group III and V sublattices are quantitatively determined for intermixing of a quaternary InGaAs/InP quantum well using polarized edge-emitting photoluminescence. Diffusion-length loci are plotted on a contour diagram of wavelength shifts of electron-heavy-hole and...

  • Defect diffusion in ion implanted AlGaAs and InP: Consequences for quantum well intermixing. Poole, P. J.; Charbonneau, S.; Aers, G. C.; Jackman, T. E.; Buchanan, M.; Dion, M.; Goldberg, R. D.; Mitchell, I. V. // Journal of Applied Physics;8/15/1995, Vol. 78 Issue 4, p2367 

    Focuses on the implantation of indium (In)-gallium (Ga)-arsenic (As)/gallium arsenide/aluminum-Ga-As and InGaAs/InGaAs-phosphorus/indium phosphide laser structures with In-Ga-As quantum wells. Reason for the high defect diffusion rate in the indium phosphide cladding layers; Photoluminescence...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics