TITLE

Experimental observation of the dynamical image potential in extremely low GaAs/AlxGa1-xAs/GaAs tunnel barriers

AUTHOR(S)
Guéret, P.; Marclay, E.; Meier, H.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1617
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Tunneling in low-barrier GaAs/AlxGa1-xAs/GaAs heterostructures has been systematically investigated over a wide range of barrier heights and thicknesses. Measured conductance data have been compared with tunnel conductances calculated with and without the image potential correction. Experimental evidence is found for the validity of the static image correction in the limit of large tunneling times, and for the occurrence of dynamic effects in the limit of short tunneling times.
ACCESSION #
9828564

 

Related Articles

  • Tunneling real-space transfer induced by wave function hybridization in modulation-doped heterostructures. Bigelow, J. M.; Leburton, J. P. // Applied Physics Letters;8/20/1990, Vol. 57 Issue 8, p795 

    We report a new tunneling mechanism in modulation-doped heterostructures based on wave function hybridization. We show that hybrid wave functions can be formed across the heterojunction by growing highly doped n-p layers below the undoped GaAs layer. The hybridization creates the condition for...

  • Tunneling magnetoresistance of MnAs thin film/GaAs/AlAs/GaAs:MnAs nanoclusters and its AlAs barrier thickness dependence. Nam Hai, Pham; Yokoyama, Masafumi; Ohya, Shinobu; Tanaka, Masaaki // Applied Physics Letters;12/11/2006, Vol. 89 Issue 24, p242106 

    The authors have investigated tunneling magnetoresistance (TMR) of magnetic tunnel junctions (MTJs) consisting of MnAs thin film (20 nm)/GaAs(1 nm)/AlAs(d=2–5 nm)/GaAs:MnAs nanoclusters (10 nm). The GaAs:MnAs material contains ferromagnetic MnAs nanoclusters in a GaAs matrix and acts as a...

  • Effects of prewells on transport in p-type resonant tunneling diodes. Lewis, R. M.; Lewis, R.M.; Wei, H. P.; Wei, H.P.; Lin, S. Y.; Lin, S.Y.; Klem, J. F.; Klem, J.F. // Applied Physics Letters;10/23/2000, Vol. 77 Issue 17 

    We investigate the transport of holes through AlAs/In[sub 0.10]Ga[sub 0.90]As resonant tunneling diodes which utilize In[sub x]Ga[sub 1-x]As prewells in the emitter with x=0, 0.10, and 0.20. The data show an increase in peak current and bias at resonance and a concurrent increase in the...

  • Spin polarized tunneling through single-crystal GaAs(001) barriers. Kreuzer, S.; Moser, J.; Wegscheider, W.; Weiss, D.; Bichler, M.; Schuh, D. // Applied Physics Letters;6/17/2002, Vol. 80 Issue 24, p4582 

    We investigate spin-dependent transport through an epitaxial GaAs(001) barrier sandwiched between polycrystalline iron films. Electron transport through the barrier is dominated by quantum mechanical tunneling, demonstrated by a nonlinear I-V characteristic, an exponential dependence of the...

  • Influence of the barrier thickness on the noise performance of AlAs/GaAs/AlAs double barrier resonant tunneling diodes. Ouacha, A.; Willander, M.; Brugger, H.; Meiners, U. // Journal of Applied Physics;6/1/1995, Vol. 77 Issue 11, p6026 

    Presents information on a study which investigated the influence of the barrier thickness on the noise performance of AlAs/gallium arsenide/AlAs double barrier resonant tunneling diodes (DBRTD). Growth of DBRTD samples by molecular beam epitaxy; Characteristics of the diode samples; Measurement...

  • Combining resonant tunneling diodes for signal processing and multilevel logic. Lakhani, Amir A.; Potter, Robert C. // Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1684 

    A device with multiple negative differential resistances was obtained by combining two AlInAs/InGaAs based resonant tunneling diodes in series. Equal peak currents and large current peak-to-valley ratios were demonstrated at room temperature. Three stable operating points were identified for...

  • Resonant tunneling through X-valley states in GaAs/AlAs/GaAs single-barrier heterostructures. Beresford, R.; Luo, L. F.; Wang, W. I.; Mendez, E. E. // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1555 

    Clear negative differential resistance has been observed in a GaAs/AlAs/GaAs single-barrier heterostructure due to the presence of a quasi-bound state associated with the X-point profile. This surprising result is due to the fact that although the Γ-point profile of this heterostructure is a...

  • Observation of resonant tunneling in AlGaAs/GaAs triple barrier diodes. Nakagawa, T.; Imamoto, H.; Kojima, T.; Ohta, K. // Applied Physics Letters;7/14/1986, Vol. 49 Issue 2, p73 

    Resonant tunneling and accompanying negative differential resistance are observed at 85 K in Al0.4Ga0.6As/GaAs triple barrier diodes, where two GaAs wells are separated by three AlGaAs barriers. Five resonance peaks, one small peak for one bias polarity, one medium and one large peak for each...

  • Sequential tunneling due to intersubband scattering in double-barrier resonant tunneling devices. Eaves, L.; Toombs, G. A.; Sheard, F. W.; Payling, C. A.; Leadbeater, M. L.; Alves, E. S.; Foster, T. J.; Simmonds, P. E.; Henini, M.; Hughes, O. H.; Portal, J. C.; Hill, G.; Pate, M. A. // Applied Physics Letters;1/18/1988, Vol. 52 Issue 3, p212 

    Magnetoquantum oscillations in the tunnel current of double-barrier n-GaAs/(AlGa)As/GaAs/(AlGa)As/GaAs resonant tunneling devices reveal evidence of sequential tunneling in the voltage range corresponding to the resonance when electrons tunnel into the second subband of the GaAs quantum well....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics