Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy

Aina, Leye; Mattingly, Mike; Stecker, Lisa
October 1988
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1620
Academic Journal
Photoluminescence from AlInAs/InP quantum wells and single heterojunctions is reported for the first time. An emission centered around 1.1 eV which is most intense in multiquantum well structures, is shown to originate from confined-particle transitions involving spatially separated electrons and holes in quantum wells in the InP and AlInAs, respectively. The AlInAs/InP heterostructure is shown to have a staggered band lineup with an effective band gap of 1.06 eV.


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