Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode

Higman, T. K.; Miller, L. M.; Favaro, M. E.; Emanuel, M. A.; Hess, K.; Coleman, J. J.
October 1988
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1623
Academic Journal
We report new experimental results on the heterostructure hot-electron diode. Improved structures, grown by metalorganic chemical vapor deposition, incorporate a single rectangular tunneling barrier of AlAs adjacent to a GaAs drift region which provides a large Γ conduction-band offset. These devices exhibit significant S-shaped negative differential resistance and dc switching at 300 K.


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