Compositional disordering of GaAs/AlGaAs multiple quantum wells using ion bombardment at elevated temperatures

Anderson, K. K.; Donnelly, J. P.; Wang, C. A.; Woodhouse, J. D.; Haus, H. A.
October 1988
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1632
Academic Journal
A new method has been developed for compositional mixing of heterostructures by ion bombardment at elevated temperatures. Complete mixing of a 1-μm-thick GaAs/AlGaAs 40-period multiple quantum well layer has been achieved by bombardment with 380 keV Ne+ ions for 1 h with the sample at 700 °C. This temperature is much lower than the annealing temperatures used in other vacancy-enhanced disordering techniques, and even lower temperatures and shorter durations should be possible. Compositional disordering is verified by sputter-profile Auger electron spectroscopy and transmission electron microscopy. Complete mixing is also demonstrated by optical transmission spectra of the disordered material, which exhibit the same band edge as a uniform alloy with the average aluminum mole fraction of the multiple quantum well layer.


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