GaAs device passivation using sputtered silicon nitride

Chang, Edward Y.; Cibuzar, Gregory T.; Vanhove, James M.; Nagarajan, Rao M.; Pande, Krishna P.
October 1988
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1638
Academic Journal
This letter describes the passivation of GaAs field-effect transistors (FET’s) using sputtered silicon nitride films. A low-power reactive sputtering process for silicon nitride film deposition was developed and applied to both metal-semiconductor FET (MESFET) and high electron mobility transistor (HEMT) passivation. It is shown that the shifts in the FET parameters such as threshold voltage, breakdown voltage, and transconductance, after nitride deposition, depend not only on the stress states of the nitride films but also on the surface composition and recess geometry of the passivated surfaces. With proper deposition parameters, the sputtered silicon nitride film can be successfully used for both MESFET and HEMT passivation with only minor degradation (less than 10%) of the device performance.


Related Articles

  • Current Collapse and Deep Levels of AlGaN/GaN Heterostructures monitored by LFN Measurements. Tacano, M.; Tanuma, N.; Yagi, S.; Okumura, H.; Matsui, T.; Sikula, J. // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p241 

    The correlation between the current collapse in the IV characteristics of AlGaN/GaN HFETs and the traps monitored through the unpassivated and SiN-passivation processes of the AlGaN/GaN heterostructures by the low frequency noise measurements is reported: the noise level of E1(47 meV) trap...

  • Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiN Layers. Tadjer, Marko; Anderson, Travis; Hobart, Karl; Mastro, Michael; Hite, Jennifer; Caldwell, Joshua; Picard, Yoosuf; Kub, Fritz; Eddy, Charles // Journal of Electronic Materials;Nov2010, Vol. 39 Issue 11, p2452 

    comparative study of AlGaN/GaN high-electron-mobility transistor (HEMT) surface passivation using ex situ and in situ deposited SiN is presented. Performing ex situ SiN passivation increased the reverse gate leakage and off-state channel leakage by about three orders of magnitude. The in situ...

  • Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates. Liang, C.-T.; Chen, Kuang Yao; Chen, N. C.; Chang, P. H.; Chang, Chin-An // Applied Physics Letters;9/25/2006, Vol. 89 Issue 13, p132107 

    We report on experimental studies of Al0.15Ga0.85N/GaN high electron mobility transistor (HEMT) structures grown on p-type Si (111) substrates. By introducing an ultrathin SiN layer during the crystal growth, the Hall mobility of the HEMT structure can be greatly enhanced (greater than three...

  • Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors. Kao, C. J.; Chen, M. C.; Tun, C. J.; Chi, G. C.; Sheu, J. K.; Lai, W. C.; Lee, M. L.; Ren, F.; Pearton, S. J. // Journal of Applied Physics;9/15/2005, Vol. 98 Issue 6, p064506 

    The performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) with either uncapped surfaces or with low-temperature (LT) GaN or SiO2 or SiNx as gate insulators is reported. The sheet carrier concentrations of AlGaN/GaN HFETs with any of these surface insulating layers are similar...

  • An investigation of different stress-free passivation layer designs in GaN HEMTs. Joshi, Diksha; Sharma, Niketa; Chaturvedi, Nidhi // AIP Conference Proceedings;Jun2013, Vol. 1536 Issue 1, p337 

    Different stress-free silicon nitride passivation layer designs were simulated using simulation software Silvaco. Different SiNx passivation layer designs (passivation only between the gate-source and gate-drain, passivation edge exactly touching the edges of source and drain contacts and coming...

  • Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation. Liu, Z. H.; Ng, G. I.; Zhou, H.; Arulkumaran, S.; Maung, Y. K. T. // Applied Physics Letters;3/14/2011, Vol. 98 Issue 11, p113506 

    The surface leakage currents and the surface trapping effects of the AlGaN/GaN high electron mobility transistors (HEMTs) on silicon with different passivation schemes, namely, a 120 nm plasma enhanced chemical vapor deposited SiN, a 10 nm atomic layer deposited (ALD) Al2O3 and a bilayer of...

  • Effect of surface passivation by SiN/SiO of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method. Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed; Gaquiere, Christophe; Maaref, Hassen // Semiconductors;Jul2013, Vol. 47 Issue 7, p1008 

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS)...

  • High transconductance heterostructure field-effect transistors based on AlGaN/GaN. Chen, Q.; Asif Khan, M.; Yang, J. W.; Sun, C. J.; Shur, M. S.; Park, H. // Applied Physics Letters;8/5/1996, Vol. 69 Issue 6, p794 

    We report on the fabrication and characterization of Al0.15Ga0.85N/GaN heterostructure field-effect transistors (HFETs) with transconductance as high as 120 mS/mm and saturated current density of 0.35 A/mm for a device with a gate length and width of 1 and 100 μm. This represents one of the...

  • Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors.... Khan, M. Asif; Shur, Michael S. // Applied Physics Letters;2/27/1995, Vol. 66 Issue 9, p1083 

    Explores the characteristics and microwave performance of aluminum gallium nitride (AlGaN)/GaN heterostructure field-effect transistors. Occurrence of temperature activated shunt conductance; Determination of the cutoff frequency and maximum frequency of oscillations; Effect of deep traps on the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics