Extrinsic p-type doping of HgCdTe grown by organometallic epitaxy

Ghandhi, S. K.; Taskar, N. R.; Parat, K. K.; Terry, D.; Bhat, I. B.
October 1988
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1641
Academic Journal
In this letter, we report on the extrinsic p-type doping of mercury cadmium telluride (MCT), during growth by organometallic vapor phase epitaxy. Arsine gas in hydrogen was used as the dopant source. The layers were characterized by Hall effect and by resistivity measurements over the temperature range from 20 to 300 K. The acceptor ionization energy was obtained for different doping concentrations from the Hall coefficient data. Its value decreases with doping concentration, and is about 8.5 meV for a doping of 1.1×1016 cm-3. This is a factor of 2 lower than the ionization energy of mercury vacancies, for layers of this (27–30% cadmium) composition and doping level. Annealing at 205 °C for 15 h in a Hg-rich ambient did not produce significant changes in the measured doping concentration. This indicates that the acceptor level is extrinsic in nature, and that arsenic behaves as a stable acceptor dopant in MCT, grown by organometallic epitaxy.


Related Articles

  • Photochemical organometallic vapor phase epitaxy of mercury cadmium telluride. Morris, B. J. // Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p867 

    Mercury cadmium telluride has been successfully grown by the photolysis of dimethylmercury, dimethylcadmium, and dimethyltelluride, using an ArF excimer laser operating at 193 nm as the radiation source. Growths were accomplished on CdTe substrates at a temperature of 150 °C, with a growth...

  • Photoconductive Hg1-xCdxTe detectors grown by low-temperature metalorganic chemical vapor deposition. Bethea, C. G.; Levine, B. F.; Lu, P.-Y.; Williams, L. M.; Ross, M. H. // Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1629 

    We have fabricated high-sensitivity Hg1-xCdxTe detectors from low-temperature metalorganic vapor deposition samples. Responsivities of R=2000 V/W and detectivities of D*=2×1010 cm Hz1/2/W have been achieved.

  • A Novel Metal-Rich Anneal for In Vacuo Passivation of High-Aspect-Ratio Mercury Cadmium Telluride Surfaces. Wan, Chang-Feng; Orent, Thomas; Myers, Thomas; Bhat, Ishwara; Stoltz, Andy; Pellegrino, Joe // Journal of Electronic Materials;Nov2013, Vol. 42 Issue 11, p3359 

    A new method for Cd-rich annealing of mercury cadmium telluride (MCT) was developed based on the observation that the deposition of Cd onto MCT by vacuum evaporation became self-limiting whenever the substrate temperature was above 70°C regardless of the Cd evaporation rate. Preliminary...

  • Growth of III–N materials and devices by metalorganic chemical vapor deposition. Dupuis, R. D.; Grudowski, P. A.; Eiting, C. J.; Park, J. // Semiconductors;Sep99, Vol. 33 Issue 9, p965 

    The characteristics of III-V nitride semiconductor epitaxial layers grown by metalorganic chemical vapor deposition are of interest for the realization of many technologically important devices. This paper will review heteroepitaxial growth on (0001) sapphire substrates as well as the...

  • MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes. Vinokurov, D. A.; Kapitonov, V. A.; Nikolaev, D. N.; Stankevich, A. L.; Lyutetskiı, A. V.; Pikhtin, N. A.; Slipchenko, S. O.; Sokolova, Z. N.; Fetisova, N. V.; Arsent’ev, I. N.; Tarasov, I. S. // Semiconductors;Nov2001, Vol. 35 Issue 11, p1324 

    A MOCVD technology for growth of InGaAs/GaAs/InGaP laser heterostructures on a modified Epiquip VP-50-RP installation was developed. Mesa stripe laser diodes with threshold current density J[sub th] = 100-200 A/cm², internal optical loss α[sub i] = 1.3-1.7 cm[sup -1], and internal quantum...

  • Flatness improvement of InP using phosphine modulation metalorganic chemical vapor deposition. Lee, M.K.; Hu, C.C. // Applied Physics A: Materials Science & Processing;1997, Vol. 64 Issue 6, p589 

    From observations with an atomic force microscope, the flatness of InP homoepitaxial layer is improved to atomic scale by phosphine modulation metalorganic chemical vapor deposition. A full width at half maximum of 5.6 meV for photoluminescence at 77 K can be achieved under optimum growth...

  • A technique for eliminating white phosphorus deposits in vapor phase epitaxy systems. Wilt, D. M.; Hoffman, R. W. // Review of Scientific Instruments;Sep93, Vol. 64 Issue 9, p2704 

    A technique of heating the exhaust lines is described whereby phosphorus in the exhaust portion of an organometallic vapor phase epitaxy reactor is encouraged to deposit in the red form rather than the pyrophoric white form. This technique is simple, effective, and does not hinder or limit the...

  • Computer automation of the Pulse Reactor, a pulse operated low-pressure metal organic vapor phase epitaxy machine. van Sark, W. G. J. H. M.; Hogenkamp, J. E. M.; van Suchtelen, J.; Giling, L. J. // Review of Scientific Instruments;Jan1990, Vol. 61 Issue 1, p146 

    A modular and thereby flexible software package has been developed to control and operate a recently designed Pulse Reactor, a new type of low-pressure metal organic Vapor phase epitaxy (MOVPE) machine. The user-friendly software package allows the operator to grow complicated layer structures...

  • Process Property Relationships of Synthetic Polymers Exposed to Organometallic Vapors. Jur, Jesse S. // Proceedings of the Annual International Conference & Exhibition ;2014, p261 

    The article discusses the study on synthetic polymers' process-property relationships when exposed to organometallic vapors.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics