Growth and transport properties of InAs epilayers on GaAs

Kalem, Seref; Chyi, Jen-Inn; Morkoç, Hadis; Bean, Ross; Zanio, Ken
October 1988
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1647
Academic Journal
A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi-insulating GaAs substrates by molecular beam epitaxy. The transport properties of the layers have been investigated by Hall effect measurements down to 10 K. The properties of the films are greatly influenced not only by the growth conditions but also by the InAs/GaAs interface structure. The mobility at room temperature is 1.8×104 cm2/V s (n=6.1×1015 cm-3) and peaks at about liquid-nitrogen temperature with a value of 5.173×104 cm2/V s (n=3.1×1015 cm-3) for a 6.2-μm-thick InAs layer. It is shown that the temperature dependence as well as the magnitude of the mobility can be explained by a combined impurity-phonon-dislocation scattering mechanism. From the combination, dislocation densities of the order of 106 cm-2 are found.


Related Articles

  • Growth of a novel InAs-GaAs strained layer superlattice on InP. Tamargo, M. C.; Hull, R.; Greene, L. H.; Hayes, J. R.; Cho, A. Y. // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p569 

    Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.

  • Pulsed laser atom probe analysis of GaAs and InAs. Cerezo, A.; Grovenor, C. R. M.; Smith, G. D. W. // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p567 

    A pulsed laser atom probe has been used to obtain the first stoichiometrically correct analysis of GaAs and InAs. These results are presented, together with a comparison of results obtained from conventional and pulsed laser atom probes.

  • Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature. Tsang, W. T. // Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p742 

    Selective area growth of GaAs and In0.53Ga0.47As epilayer structure with well-defined smooth edges has been achieved with a Si mask shadowing technique for chemical beam epitaxy (CBE). Epilayer stripes with widths as narrow as 2–5 μm have been replicated. An experiment was also...

  • Structural and optical properties of high quality InAs/GaAs short-period superlattices grown by migration-enhanced epitaxy. Gérard, J. M.; Marzin, J. Y.; Jusserand, B.; Glas, F.; Primot, J. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p30 

    InAs/GaAs highly strained short-period superlattices have been grown by migration-enhanced epitaxy on InP(001) substrates. Such samples exhibit clearly improved structural and optical properties. X-ray diffraction, scanning transmission electron microscopy, photoluminescence, and Raman...

  • Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures. Söderström, J. R.; Chow, D. H.; McGill, T. C. // Applied Physics Letters;9/25/1989, Vol. 55 Issue 13, p1348 

    We report large peak-to-valley current ratios in InAs/AlxGa1-xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is...

  • Carbon implantation in InGaAs and AlInAs. Pearton, S. J.; Hobson, W. S.; Kinsella, A. P.; Kovalchick, J.; Chakrabarti, U. K.; Abernathy, C. R. // Applied Physics Letters;3/26/1990, Vol. 56 Issue 13, p1263 

    It is shown for the first time that carbon behaves predominantly as an acceptor in InGaAs and AlInAs under co-implantation conditions. The co-implanted ion, regardless of species, acts to create vacant lattice sites for occupation by the carbon. Implantation of 40 keV carbon ions alone at doses...

  • High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-�m Spectral Range with a Large-Diameter Active Area. Andreev, I.A.; Il'inskaya, N.D.; Kunitsyna, E.V.; Mikha&icaron;lova, M.P.; Yakovlev, Yu.P. // Semiconductors;Aug2003, Vol. 37 Issue 8, p949 

    The results of a study aimed at the fabrication of high-sensitivity photodiodes for the 0.9- to 2.55-�m spectral range with a photosensitive area diameter as large as 1�3 mm are presented. A large range of photodiodes based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a...

  • Operation of an InAs quantum-dot embedded GaAs photonic crystal slab waveguide laser by using two-photon pumping for photonics integrated circuits. Oda, H.; Yamanaka, A.; Ozaki, N.; Ikeda, N.; Sugimoto, Y. // AIP Advances;2016, Vol. 6 Issue 6, p065215-1 

    The development of small sized laser operating above room temperature is important in the realization of optical integrated circuits. Recently, micro-lasers consisting of photonic crystals (PhCs) and whispering gallery mode cavities have been demonstrated. Optically pumped laser devices could be...

  • InAs nanowires and whiskers grown by reaction of indium with GaAs. He, Maoqi; Fahmi, M. M. E.; Mohammad, S. Noor; Jacobs, Randolph N.; Salamanca-Riba, Lourdes; Felt, Frederick; Jah, Muzar; Sharma, Ashok; Lakins, Darryl // Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3749 

    Free-standing InAs nanowires and whiskers were grown employing reaction of indium (In) liquid and vapor with GaAs substrate. The arsenic (As) atoms resulting from this reaction were transported by a flow of N[sub 2] or NH[sub 3] to the growth location where they reacted with In to produce InAs...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics