TITLE

Comment on ‘‘Low-temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]

AUTHOR(S)
Pelletier, J.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1665
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Comment on the article 'Low-temperature reactive ion etching and microwave plasma etching of silicon,' by Shinichi Tachi, Kazunori Tsujimoto and Sadayuki Okudaira and published in a 1988 issue of 'Applied Physics Letters.' Efficiency of wafer cooling during plasma etching.
ACCESSION #
9828527

 

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