TITLE

Response to ‘‘Comment on ‘Low-temperature reactive ion etching and microwave plasma etching of silicon’ ’’ [Appl. Phys. Lett. 53, 1665 (1988)]

AUTHOR(S)
Tachi, Shinichi; Tsujimoto, Kazunori; Okudaira, Sadayuki
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1666
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Responds to comment on the article 'Low-temperature reactive ion etching and microwave plasma etching of silicon,' published in a 1988 issue of 'Applied Physics Letters.' Difference between low temperature etching and conventional dry etching; Wafer temperature control in the temperature range of -150 to +30 degree Celcius.
ACCESSION #
9828526

 

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