Response to ‘‘Comment on ‘Low-temperature reactive ion etching and microwave plasma etching of silicon’ ’’ [Appl. Phys. Lett. 53, 1665 (1988)]

Tachi, Shinichi; Tsujimoto, Kazunori; Okudaira, Sadayuki
October 1988
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1666
Academic Journal
Responds to comment on the article 'Low-temperature reactive ion etching and microwave plasma etching of silicon,' published in a 1988 issue of 'Applied Physics Letters.' Difference between low temperature etching and conventional dry etching; Wafer temperature control in the temperature range of -150 to +30 degree Celcius.


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