TITLE

GaAs/AlGaAs optical waveguides on silicon substrates grown by molecular beam epitaxy

AUTHOR(S)
Kim, Young-Soon; Ramaswamy, Ramu V.; Sakai, Shiro; Matyi, R. J.; Shichijo, H.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1586
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A single-heterostructure optical waveguide at 1.3 μm wavelength in GaAs/AlGaAs, grown on Si by molecular beam epitaxy, is demonstrated. 6-μm-wide ridge waveguides with 0.25 μm ridge height had single modes and the measured average propagation loss was 11.7 dB/cm. The principal loss was mainly due to the relatively large free-carrier concentration in the guiding layer. It is expected that lower free-carrier concentration (∼1015 cm-3) will lead to waveguides with propagation loss of less than 3 dB/cm.
ACCESSION #
9828517

 

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