TITLE

Influence of compressive and tensile strain on growth mode during epitaxical growth: A computer simulation study

AUTHOR(S)
Ghaisas, S. V.; Madhukar, A.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1599
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The influence of compressive and tensile strain on the growth front morphology during molecular beam epitaxy is examined via computer simulations. It is found that the tendency for occurrence of three (two) dimensional morphology for compressive (tensile) strain indicated in reflection high-energy electron diffraction intensity measurements can be understood in terms of the influence of strain on the surface migration kinetics provided it is assumed that (i) for compressive in-plane strain the intraplanar migration is lowered whereas the interplanar migration is enhanced, and (ii) the opposite holds for tensile in-plane strain.
ACCESSION #
9828515

 

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