Low-frequency resonant Raman scattering in AlAs-GaAs atomic-layer superlattices

Toriyama, Takeshi; Kobayashi, Naoki; Horikoshi, Yoshiji
October 1988
Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1614
Academic Journal
New Raman lines are observed at the lowest ever frequencies in (AlAs)1(GaAs)n (n=1,2,3) atomic-layer superlattices under band-gap resonant excitation at low temperature. These lines appear in the 30–60 cm-1 region and their intensity is resonantly enhanced as the excitation photon energy approaches the photoluminescence peak energy. Analyses using the elastic continuum model indicate that these lines could be attributed to folded transverse acoustic phonons near the Brillouin-zone edge of the superlattices.


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