Universal relation between electron channeling line intensity and thickness of disordered layers on single crystals

Suzuki, Tadashi; Kido, Yoshiaki
October 1988
Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1486
Academic Journal
Electron channeling patterns (ECP’s) were measured for Si and GaAs single crystals with thin polycrystal films or ion-damaged layers on the top surfaces. The intensity scans along channeling lines provide quantitative information on the above disordered layer thickness. We have derived a universal relation between the channeling line intensity and disordered layer thickness. This scaling law is independent of channeling planes and species of the single crystals and disordered layers.


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