Independent control of spin density and hydrogen-bonding configuration in glow-discharge-hydrogenated Si-Ge alloys using a cathode-heating method

Matsuda, A.; Yokoyama, S.; Tanaka, K.
October 1988
Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1489
Academic Journal
The number density of dangling bonds (spin density) and the hydrogen content as well as the hydrogen-bonding configuration were independently controlled in the glow-discharge hydrogenated amorphous Si-Ge alloys using a cathode-heating technique. A tentative mechanism is presented in terms of the top surface process as well as the growth zone.


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