Precipitation of impurities in GaAs amorphized by ion implantation

Opyd, W. G.; Gibbons, J. F.; Mardinly, A. J.
October 1988
Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1515
Academic Journal
Impurities in a GaAs layer that had been amorphized by ion implantation were observed to precipitate upon annealing. Photoluminescence spectra indicated that the resulting high electrical resistivity could be attributed to the formation of neutral impurity complexes rather than a compensation mechanism. Impurities studied were implanted Si and Se. Transmission electron microscopy and x-ray microanalysis were used to identify impurity precipitates and related stacking fault tetrahedra. These results correlate with similar examples of poor activation for impurities in GaAs grown by low-temperature molecular beam epitaxy.


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