TITLE

Metal contacts to p-type GaAs with large Schottky barrier heights

AUTHOR(S)
Waldrop, J. R.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1518
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Metal Schottky barrier contacts to p-type (100) GaAs are described in which a large Schottky barrier height [lowercase_phi_synonym]B is attained by using a very thin Si or Ge interface layer to influence the interface Fermi energy EiF. The metals investigated are Au, Cr, Mn, Ni, and Al. Au, Cr, and Mn contacts have [lowercase_phi_synonym]B values from 0.7 to 0.9 eV when ∼15 Å Si and Ge interlayers are made heavily n type. Ni and Al contact [lowercase_phi_synonym]B values were limited to 0.6–0.7 eV. X-ray photoemission spectroscopy was used to obtain the EiF and interface composition during contact formation; the [lowercase_phi_synonym]B for the corresponding thick contacts was measured by current-voltage and capacitance-voltage methods.
ACCESSION #
9828472

 

Related Articles

  • Mechanism of current flow in alloyed ohmic In/GaAs contacts. Blank, T.; Gol’dberg, Yu.; Konstantinov, O.; Nikitin, V.; Posse, E. // Technical Physics;Feb2007, Vol. 52 Issue 2, p285 

    A mechanism of current flow in an alloyed ohmic In contact to low-doped gallium arsenide ( n = 4 × 1015 cm−3) is studied. From the temperature dependence of the contact resistance per unit surface area, it is found that the basic mechanism of current flow is thermionic emission through...

  • Erratum: Identification of residual donors in high-purity epitaxial GaAs by magnetophotoluminescence [Appl. Phys. Lett. 51, 937 (1987)]. Bose, S. S.; Lee, B.; Kim, M. H.; Stillman, G. E. // Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1288 

    Presents a correction of the error made in the article on epitaxial gallium arsenide semiconductors.

  • Model for degradation of band-gap photoluminescence in GaAs. Guidotti, Daniel; Hovel, Harold J. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1411 

    A recombination-enhanced defect reaction model is described. It is based on nonradiative recombination of photoexcited carriers at particular crystal defect sites near a semiconductor surface. The model is general and correctly predicts, with only one adjustable parameter, the photoluminescence...

  • Local structure around Zn atoms diffused into the GaAs crystal. Kitano, T.; Matsumoto, Y.; Matsui, J. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1390 

    We have studied the local structure around Zn atoms diffused into the GaAs crystal using the extended x-ray absorption fine structure method. Although Zn atoms are associated with vacancies at the first nearest neighbor (NN) sites, the first NN distance remains constant even where vacancies...

  • Photorefractive gain in GaAs under a dc electric field. Liu, Duncan T. H.; Cheng, Li-Jen; Rau, Mann-Fu; Wang, Faa-Ching // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1369 

    We report the first observation of a photorefractive gain coefficient as high as 2.6 cm-1 in the undoped liquid-encapsulated Czochralski-grown GaAs crystals at 1.06 μm under a dc electric field of 13 kV/cm without using the moving grating technique. The absorption coefficient of the crystals...

  • Optically enhanced photoconductivity in semi-insulating gallium arsenide. Desnica, U. V.; Šantic, B. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p810 

    Time evolution of photoconductivity of semi-insulated gallium arsenide illuminated at low temperatures with monochromatic 0.7–1.8 eV photons was studied. For low light intensity the photosensitivity increases with time by several orders of magnitude and exhibits different dynamics for...

  • Package's material eliminates cracking in GaAs microwave control device. Maliniak, David // Electronic Design;3/4/96, Vol. 44 Issue 5, p42 

    Reports that Mini-Systems Inc. has developed a packaging method for gallium arsenide (GaAs) electronic devices. Problems encountered in the conventional packaging of GaAs devices; Characteristics of the new packaging method.

  • Peculiarities of the Long-Range Effects in GaAs-Based Transistor Structures upon Combined Irradiation with Ions of Various Masses. Obolensky, S. V.; Skupov, V. D. // Technical Physics Letters;Jan2003, Vol. 29 Issue 1, p54 

    Anomalous distinctions in the depth profiles of charge carrier density in the active regions of GaAsbased structures were observed for samples irradiated from the rear side (through substrate) with molecular hydrogen and argon ions either separately or in a certain combined sequence. The maximum...

  • Band-edge photoluminescence of heavily doped In[sub x]Ga[sub 1-x]As[sub 1-y]P[sub y](?=1.2 �m). Karachevtseva, M. V.; Strakhov, V. A.; Yaremenko, N. G. // Semiconductors;Aug99, Vol. 33 Issue 8, p830 

    Band-edge photoluminescence spectra of heavily donor-doped samples of In[sub x]Ga[sub 1-x]As[sub 1-y]P[sub y] (x = 0.77, y = 0.53) were investigated in the temperature range (77-300) K. A theory of luminescence that takes into account fluctuations in the band-edge potentials due to nonuniform...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics