TITLE

Metal contacts to p-type GaAs with large Schottky barrier heights

AUTHOR(S)
Waldrop, J. R.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1518
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Metal Schottky barrier contacts to p-type (100) GaAs are described in which a large Schottky barrier height [lowercase_phi_synonym]B is attained by using a very thin Si or Ge interface layer to influence the interface Fermi energy EiF. The metals investigated are Au, Cr, Mn, Ni, and Al. Au, Cr, and Mn contacts have [lowercase_phi_synonym]B values from 0.7 to 0.9 eV when ∼15 Å Si and Ge interlayers are made heavily n type. Ni and Al contact [lowercase_phi_synonym]B values were limited to 0.6–0.7 eV. X-ray photoemission spectroscopy was used to obtain the EiF and interface composition during contact formation; the [lowercase_phi_synonym]B for the corresponding thick contacts was measured by current-voltage and capacitance-voltage methods.
ACCESSION #
9828472

 

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