Threshold transport of high-mobility two-dimensional electron gas in GaAs/AlGaAs heterostructures

Jiang, C.; Tsui, D. C.; Weimann, G.
October 1988
Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1533
Academic Journal
We have measured the conductivity of the high-mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures at low temperatures as a function of the carrier density (n) close to the conduction threshold. We find that metallic conduction persists to n∼1.4×1010 cm-2, and that the mobility drops much faster than that expected from impurity scattering for n below a characteristic density, which decreases with increasing AlGaAs spacer thickness. This behavior is explained by the effect of the 2DEG density fluctuations at low n close to the conduction threshold, first predicted by Brews’ theory [J. Appl. Phys. 46, 2181 (1975)].


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