Determination of the D 0/- level in amorphous Si,Ge:H(F) by time-of-flight charge collection

Shen, D. S.; Conde, J. P.; Chu, V.; Liu, J. Z.; Aljishi, S.; Smith, Z E.; Maruyama, A.; Wagner, S.
October 1988
Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1542
Academic Journal
We describe and demonstrate a new method for determining the density of states of the doubly occupied D0/- level in amorphous hydrogenated silicon and its alloys. The total charge collected during an electron time-of-flight measurement is determined as a function of T. T determines the energy E from which electrons are emitted during the measurement. Variation of T (and E) probes the local density of states. We present results for hydrogenated amorphous silicon before and after light soaking, and for amorphous silicon-germanium (a-Si,Ge:H,F) alloys.


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