Photorefractive gain in GaAs under a dc electric field

Liu, Duncan T. H.; Cheng, Li-Jen; Rau, Mann-Fu; Wang, Faa-Ching
October 1988
Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1369
Academic Journal
We report the first observation of a photorefractive gain coefficient as high as 2.6 cm-1 in the undoped liquid-encapsulated Czochralski-grown GaAs crystals at 1.06 μm under a dc electric field of 13 kV/cm without using the moving grating technique. The absorption coefficient of the crystals used is 1.3 cm-1, showing that a net gain has been achieved. This measured gain coefficient is close to the predicted theoretical value.


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