TITLE

Extremely wide modulation bandwidth in a low threshold current strained quantum well laser

AUTHOR(S)
Suemune, I.; Coldren, L. A.; Yamanishi, M.; Kan, Y.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1378
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Lasing characteristics of strained quantum well (QW) structures such as InGaAs/AlGaAs on GaAs and InGaAs/InAlAs on InP were analyzed by taking into account the band mixing effect in the valence band. A relaxation oscillation frequency fr, which gives a measure of the upper modulation frequency limit, was found increased three times in a 50 Å In0.9Ga0.1As/In0.52Al0.48As QW structure compared with that in a 50 Å GaAs/Al0.4Ga0.6As QW structure for the undoped case. One of the main factors for this improved frequency bandwidth is attributed to the reduced subband nonparabolicity as well as the reduced valence-band density of state in the strained QW structure. The corresponding lasing threshold current is one order of magnitude smaller than that of the GaAs/AlGaAs QW structure. With a p doping in the QW the fr value increases, and the 3 dB cutoff frequency of about 90 GHz will be expected with an acceptor concentration of 5×1018 cm-3 in the In0.9Ga0.1As/In0.52Al0.48As QW.
ACCESSION #
9828409

 

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