TITLE

Epitaxy of CoSi2 on Si (111) at low temperature (≤400 °C)

AUTHOR(S)
Haderbache, L.; Wetzel, P.; Pirri, C.; Peruchetti, J. C.; Bolmont, D.; Gewinner, G.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1384
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The epitaxial growth of thin CoSi2 films on a Si(111) surface has been studied using surface techniques such as low-energy electron diffraction and photoemission spectroscopy. Various preparation methods at low temperature (≤400 °C) are investigated. Both layer by layer growth and coevaporation invariably exhibit a bulk and surface excess of Si. In contrast a different preparation method where the Co atoms were evaporated onto the Si(111) substrate maintained at ∼360 °C produces CoSi2 films exposing a Co-rich CoSi2 surface without any Si excess in bulk. It is concluded from these experiments that at ∼360 °C diffusion of Si from substrate through the CoSi2 layer is much easier than usually expected and quite sufficient to sustain further CoSi2 growth without any extra Si supply.
ACCESSION #
9828406

 

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