Photochromism and anomalous crystallite orientation of ZnO films prepared by a sputtering-type electron cyclotron resonance microwave plasma

Matsuoka, Morito; Ono, Ken’ichi
October 1988
Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1393
Academic Journal
This letter describes the crystal structure and the photochromism of ZnO films, which are prepared by a sputtering-type electron cyclotron resonance microwave plasma. c-axis preferential orientation and (101) preferential orientation are realized in the Zn oxide films, which are deposited on a glass substrate at a low temperature below 200 °C. Both films have an excellent crystallite orientation that is the best reported to date. The films with anomalous crystallite orientation exhibit typical photochromic characteristics, which are induced by x-ray irradiation. The photochromism is caused by a color center, that is, the O2- vacancy in ZnO films. The absorption center exists in an energy range of 1.5–4 eV.


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