TITLE

Solid phase epitaxy of laser amorphized silicon

AUTHOR(S)
Custer, J. S.; Thompson, Michael O.; Bucksbaum, P. H.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1402
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The solid phase epitaxial regrowth kinetics of laser amorphized [100] silicon-on-sapphire was studied using in situ time-resolved optical transmission. Regrowth rates for ≤20-nm-thick amorphous silicon films were observed to increase from 1.7×10-10 cm/s at 750 K to 1.9×10-7 cm/s at 900 K. The recrystallization velocity followed an Arrhenius behavior with an activation enthalpy of 2.71 eV. These results provide strong confirmation that the metastable phase quenched following laser irradiation is structurally equivalent to amorphous silicon produced by ion implantation or ultrahigh vacuum deposition, and is not stabilized by impurities.
ACCESSION #
9828397

 

Related Articles

  • Influence of the deposition and annealing conditions on the optical properties of amorphous silicon. Mashin, A. I.; Ershov, A. V.; Khokhlov, D. A. // Semiconductors;Nov98, Vol. 32 Issue 11, p1239 

    The refractive index and extinction coefficient in the range 0.6-2.0 eV of amorphous silicon films deposited by electron-beam evaporation with variation of the substrate temperature, deposition rate, and anneal temperature in an air atmosphere are presented. The results are discussed in terms of...

  • Multiple bonds in hydrogen-free amorphous silicon. Mashin, A. I.; Khokhlov, A. F. // Semiconductors;Aug99, Vol. 33 Issue 8, p911 

    The short-range-order structure and electron paramagnetic resonance of amorphous silicon prepared by vacuum sublimation and by ion implantation are investigated. It is found that amorphous silicon with atoms in the sp² hybrid state is formed in the annealing of evaporated silicon at 500 °C...

  • X-ray Spectroscopic Study of Electronic Structure of Amorphous Silicon and Silicyne. Mashin, A. I.; Khokhlov, A. F.; Domashevskaya, É. P.; Terekhov, V. A.; Mashin, N. I. // Semiconductors;Aug2001, Vol. 35 Issue 8, p956 

    X-ray and ultrasoft X-ray spectroscopy have both been applied to study SiK[sub β] and SiL[sub 23] emission spectra of crystalline silicon (c-Si), amorphous hydrogenated silicon (a-Si:H), and silicyne (a new allotropic linear-chain form of silicon). SiL[sub 23] spectra of silicyne show three...

  • Erbium Electroluminescence in p–i–n Amorphous Hydrogenated Silicon Structures. Terukov, E. I.; Gusev, O. B.; Kon’kov, O. I.; Undalov, Yu. K.; Stutzmann, M.; Janotta, A.; Mell, H.; Kleider, J. P. // Semiconductors;Nov2002, Vol. 36 Issue 11, p1240 

    A comparative analysis of λ = 1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventional p-i-n structures based on this material is demonstrated for the first...

  • Mechanism of erbium electroluminescence in hydrogenated amorphous silicon. Bresler, M. S.; Gusev, O. B.; Pak, P. E.; Terukov, E. I.; Tséndin, K. D.; Yassievich, I. N. // Semiconductors;Jun99, Vol. 33 Issue 6, p622 

    The mechanism of the electroluminescence of erbium under a reverse bias in structures based on hydrogenated amorphous silicon is studied. Erbium ions are excited through an Auger process, in which conduction electrons are trapped by neutral dangling bonds (D[sup 0] centers) located near the...

  • Effect of ion irradiation of amorphous-silicon films on their crystallization. Bakhtina, N. V.; Mashin, A. I.; Pavlov, A. P.; Pitirimova, E. A. // Semiconductors;Mar1998, Vol. 32 Issue 3, p316 

    The change in the structure of amorphous Si films implanted with inert-gas ions and chemically active impurity was investigated by transmission electron microscopy and electron diffraction methods. It was shown that as a result of radiation-induced formation of thermally stable vacancy...

  • Effect of the charge state of defects on the light-induced kinetics of the photoconductivity of amorphous hydrated silicon. Golikova, O. A. // Semiconductors;Mar1998, Vol. 32 Issue 3, p312 

    The photoconductivity and defect density in films of nondoped a-Si:H soaked with light (W = 114 mW/cm², ∼ < 0.9 µm) for 5 h were investigated. It is shown that σ[sub ph] ∼ t[sup -γ] and N[sub D] ∼t[sup β], where γ > β or γ ... β, depending on the...

  • Properties of periodic α-Si:H/a-SiN[sub x]:H structures obtained by nitridization of amorphous-silicon layers. Bilenko, D. I.; Belobrovaya, O. Ya.; Galishnikova, Yu. N.; Zharkova, É. A.; Kazanova, N. P.; Koldobanova, O. Yu.; Khasina, E. I. // Semiconductors;Mar1998, Vol. 32 Issue 3, p297 

    The kinetics of nitridization of a-Si:H layers, the properties of the structures that are formed and a-Si:H in them have been investigated. The changes occurring in the resistance of the a-Si:H layers in the course of nitridization are described in terms of the competition between doping,...

  • Diffusion saturation of nondoped hydrated amorphous silicon by tin impurity. Kabaldin, A. N.; Neımash, V. B.; Tsmots’, V. M.; Shtym, V. S. // Semiconductors;Mar1998, Vol. 32 Issue 3, p263 

    The effect of radiation defects on the field and temperature dependences of the magnetic susceptibility of single-crystal Si was studied. A nonlinear magnetic-field-dependence of the magnetic susceptibility of irradiated Si was observed. This behavior can be explained by magnetic ordering of A...

  • Mobility-lifetime products in hydrogenated amorphous silicon. Crandall, Richard S.; Balberg, I. // Applied Physics Letters;2/4/1991, Vol. 58 Issue 5, p508 

    Studies the mobility-lifetime products in hydrogenated amorphous silicon. Photoelectronic quality of a semiconductor; Fraction of the injected charge; Measurement of photocurrent.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics