Solid phase epitaxy of laser amorphized silicon

Custer, J. S.; Thompson, Michael O.; Bucksbaum, P. H.
October 1988
Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1402
Academic Journal
The solid phase epitaxial regrowth kinetics of laser amorphized [100] silicon-on-sapphire was studied using in situ time-resolved optical transmission. Regrowth rates for ≤20-nm-thick amorphous silicon films were observed to increase from 1.7×10-10 cm/s at 750 K to 1.9×10-7 cm/s at 900 K. The recrystallization velocity followed an Arrhenius behavior with an activation enthalpy of 2.71 eV. These results provide strong confirmation that the metastable phase quenched following laser irradiation is structurally equivalent to amorphous silicon produced by ion implantation or ultrahigh vacuum deposition, and is not stabilized by impurities.


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