Photoluminescence measurements on open-tube heat-treated and Cd-diffused InP

Banerjee, S.; Srivastava, A. K.; Arora, B. M.; Sulhoff, J. W.; Zyskind, J. L.
October 1988
Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1429
Academic Journal
Cadmium incorporation in nominally undoped n-InP using open-tube diffusion has been investigated by photoluminescence (PL) measurements. A Sn-InP solution has been used to provide P vapor overpressure during the diffusion. This results in a 2–3 times larger incorporation of Cd acceptors in InP as compared to a low P vapor overpressure condition. In addition, the overall degradation in the PL intensity is considerably reduced by this technique. The degradation in InP during diffusion is further investigated by PL measurements on heat-treated InP under the diffusion conditions.


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