Effect of facet coating on the reliability of InGaAlP visible light laser diodes

Itaya, Kazuhiko; Ishikawa, Masayuki; Okuda, Hazime; Watanabe, Yukio; Nitta, Koichi; Shiozawa, Hideo; Uematsu, Yutaka
October 1988
Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1363
Academic Journal
Effect of facet coating on the reliability of InGaAlP visible light laser diodes is investigated. Uncoated InGaAlP laser diodes showed facet oxygen related degradation after aging as the gradual degradation mode. Such degradation was drastically suppressed by facet coating. InGaAlP laser diodes with Al2O3-coated facets have operated for more than 2500 h at 50 °C at an optical output power of 3 mW without any significant degradation.


Related Articles

  • Polarization control in ridge-waveguide-laser diodes. Amann, Markus-Christian // Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1038 

    The polarization dependence of the gain/current relation and threshold current of quasi-index-guided laser diodes is analyzed for the case of λ=1.3 μm InGaAsP-InP ridge-waveguide lasers. Thereby it is shown that three different regimes for the stripe width and the lateral effective index...

  • HBV tripler with 21% efficiency at 102 GHz. Vukusic, J.; Alderman, B.; Emadi, T. A.; Sadeghi, M.; Olsen, A. Ø.; Bryllert, T.; Stake, J. // Electronics Letters;3/16/2006, Vol. 42 Issue 6, p355 

    An InAlGaAs/InP based heterostructure barrier varactor (HBV) frequency multiplier is designed and fabricated. Embedded on a circuit in a multiplier block, the system exhibits state-of-the-art, flange-to-flange efficiency of 21% at 102 GHz. The maximum output power was 32 mW, which could be...

  • Gated-mode single-photon detection at 1550 nm by discharge pulse counting. Yoshizawa, Akio; Kaji, Ryosaku; Tsuchida, Hidemi // Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3606 

    Gated-mode single-photon detection using an avalanche photodiode is characterized by charge and discharge pulses, which are attributable to capacitive behavior. In this letter, the discharge pulse rather than the photon-induced avalanche pulse is counted in single-photon detection, in order to...

  • Multi-gigahertz operation of photon counting InGaAs avalanche photodiodes. Yuan, Z. L.; Sharpe, A. W.; Dynes, J. F.; Dixon, A. R.; Shields, A. J. // Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p071101 

    We report a 2 GHz operation of InGaAs avalanche photodiodes for efficient single photon detection at telecom wavelengths. Employing a self-differencing circuit that incorporates tuneability in both frequency and arm balancing, extremely weak avalanches can now be sensed so as to suppress...

  • Hole escape processes detrimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions. Inoue, T.; Fujiwara, K.; Sheu, J. K. // Applied Physics Letters;4/16/2007, Vol. 90 Issue 16, p161109 

    Photoluminescence (PL) properties of a blue In0.3Ga0.7N multiple-quantum-well (MQW) diode with an additional n+-doped In0.18Ga0.82N electron reservoir layer (ERL) have been investigated at 20 K as a function of reverse bias under indirect barrier excitation. A PL intensity ratio of MQW/ERL is...

  • Effects of stress on threshold, wavelength, and polarization of the output of InGaAsP semiconductor diode lasers. Adams, Charles S.; Cassidy, Daniel T. // Journal of Applied Physics;12/15/1988, Vol. 64 Issue 12, p6631 

    Presents information on a study which examined the effects of tension and compression applied to unbonded indium compound semiconductor diode lasers. Method of explaining the observed dependence of threshold, wavelength, and polarization of the laser output on the applied stress; Description of...

  • High-efficiency monochrome organic light emitting diodes employing enhanced microcavities. Meerheim, Rico; Nitsche, Robert; Leo, Karl // Applied Physics Letters;7/28/2008, Vol. 93 Issue 4, p043310 

    We demonstrate enhanced light outcoupling from bottom emitting monochrome high-efficiency red, green, and blue organic light emitting diodes by adding silver layers on the indium tin oxide (ITO) anode. The devices contain the phosphorescent emitting dyes tris(2-phenylpyridine)iridium and...

  • Ultraviolet laser diodes: Indium-free success. Schwarz, Ulrich // Nature Photonics;Sep2008, Vol. 2 Issue 9, p521 

    The article discusses the indium-free diode which operates at the shortest wavelength for an electrically pumped semiconductor laser diode. The light emitting diodes (LEDs) are based on GaN quantum wells which cover the spectral range from the red to deep-ultraviolet (UV) wavelengths. The new...

  • Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer. Sheu, Jinn-Kong; Lu, Y. S.; Lee, Min-Lum; Lai, W. C.; Kuo, C. H.; Tun, Chun-Ju // Applied Physics Letters;6/25/2007, Vol. 90 Issue 26, p263511 

    GaN-based light-emitting diodes (LEDs) with indium tin oxide (ITO)/Ga-doped ZnO (GZO) composite oxide films serving as a transparent contact layer (TCL) were demonstrated. In this study, the wall-plug efficiency of LEDs (LED-III) with textured ITO/GZO composite TCL can be markedly improved by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics