TITLE

Diffraction-limited-beam, high-power operation from X-junction coupled phase-locked arrays of AlGaAs/GaAs diode lasers

AUTHOR(S)
Botez, D.; Hayashida, P.; Mawst, L. J.; Roth, T. J.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1366
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel type of phase-locked array is demonstrated. The device is a ten-element AlGaAs/GaAs array with both evanescent wave coupling as well as coupling via X-type junctions. The array selects and maintains operation in the highest order array mode of a ten-element device: mode L=10. Threshold currents are ∼300 mA. Diffraction-limited-beam operation is achieved to 2.8×threshold and ∼200 mW (front facet of devices with optimized facet coatings). The beam lobewidths remain under 1.5×diffraction limit to 6.3×threshold and 300 mW (both facets of uncoated devices). Near-field intensity patterns confirm the intrinsic stability of high-order array modes against gain spatial hole burning.
ACCESSION #
9828357

 

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