Experimental test of the transition layer model of atomic layer epitaxy

Juza, P.; Sitter, H.; Herman, M. A.
October 1988
Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1396
Academic Journal
Thermal desorption experiments concerning Te deposits on GaAs (100) surfaces have been performed using quadrupole mass spectrometry. The results give evidence that near the GaAs surface two regions of different Te adsorption can be distinguished. The first region nearest to the substrate surface consists of Te adparticles, which are chemisorbed to the substrate reevaporating at temperatures above 510–520 °C. The adparticles of the second physisorbed region begin to desorb at 350–360 °C, which is still considerably higher than the desorption temperature of the bulk Te deposits. The approximate thicknesses of these two regions are 1–2 monolayers and 3–10 monolayers of Te, respectively.


Related Articles

  • Effect of light on the DX centers in Si- and Te-doped GaAlAs. Seguy, Patrice; Yu, Peter Y.; Li, Ming-fu; Leon, Rosa; Chan, K. T. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2469 

    Deep level transient spectroscopy (DLTS) and constant temperature capacitance transient measurements have been performed on the DX centers under light illumination in GaAlAs alloys doped with Si and Te. Assuming that the effect of light is to ionize the DX centers, experimental DLTS spectra have...

  • Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice. Wu, C.L.; Hsu, W.C.; Shieh, H.M. // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p608 

    Significant improvement on two-dimensional electron gas (2DEG) concentration and mobility in a δ-doping superlattice GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructures prepared by low-pressure metalorganic chemical vapor deposition have been demonstrated and discussed. The secondary-ion...

  • Scattering of conduction electrons at a spatially correlated system of charges in a heavily doped GaAs: Te semiconductor. Bogdanova, V. A.; Davletkil’deev, N. A.; Semikolenova, N. A.; Sidorov, E. N. // Semiconductors;Feb2006, Vol. 40 Issue 2, p161 

    The results of studying the absorption of infrared radiation by free charge carriers in the GaAs:Te single crystals, grown by the Czochralski method, had the electron concentration n 0=5×1017−6×1018 cm−3 are reported. An analysis of the spectral dependences of the absorption...

  • Order-of-magnitude reduction of carrier lifetimes in [100] n-type GaAs shock-compressed to 4 GPa. Grivickas, P.; McCluskey, M. D.; Gupta, Y. M. // Applied Physics Letters;2/28/2011, Vol. 98 Issue 9, p092107 

    Dynamics of excess carriers, following a short excitation pulse, were recorded in shock-compressed [100] GaAs:Te to 4 GPa using time- and spectral-resolved photoluminescence (PL) measurements. PL signals extending over five orders of magnitude and comprising several recombination mechanisms were...

  • Package's material eliminates cracking in GaAs microwave control device. Maliniak, David // Electronic Design;3/4/96, Vol. 44 Issue 5, p42 

    Reports that Mini-Systems Inc. has developed a packaging method for gallium arsenide (GaAs) electronic devices. Problems encountered in the conventional packaging of GaAs devices; Characteristics of the new packaging method.

  • Peculiarities of the Long-Range Effects in GaAs-Based Transistor Structures upon Combined Irradiation with Ions of Various Masses. Obolensky, S. V.; Skupov, V. D. // Technical Physics Letters;Jan2003, Vol. 29 Issue 1, p54 

    Anomalous distinctions in the depth profiles of charge carrier density in the active regions of GaAsbased structures were observed for samples irradiated from the rear side (through substrate) with molecular hydrogen and argon ions either separately or in a certain combined sequence. The maximum...

  • Band-edge photoluminescence of heavily doped In[sub x]Ga[sub 1-x]As[sub 1-y]P[sub y](λ=1.2 μm). Karachevtseva, M. V.; Strakhov, V. A.; Yaremenko, N. G. // Semiconductors;Aug99, Vol. 33 Issue 8, p830 

    Band-edge photoluminescence spectra of heavily donor-doped samples of In[sub x]Ga[sub 1-x]As[sub 1-y]P[sub y] (x = 0.77, y = 0.53) were investigated in the temperature range (77-300) K. A theory of luminescence that takes into account fluctuations in the band-edge potentials due to nonuniform...

  • Comparison of the Polarizations of the 1.2-eV Photoluminescence Band in n-GaAs:Te under Uniaxial Pressure and Resonance Polarized Excitation. Gutkin, A. A.; Reshchikov, M. A.; Sedov, V. E. // Semiconductors;Oct2000, Vol. 34 Issue 10, p1151 

    It is shown that the photoluminescence (PL) band at 1.2 eV in n-GaAs:Te, which is associated with emission from V[sub Ga]Te[sub As] complexes with reorienting Jahn-Teller distortions, also includes a contribution from nonreorienting defects. The optical dipole parameters are almost the same for...

  • GaAs in GaSb: Strained Nanostructures for Mid-Infrared Optoelectronics. Solov’ev, V. A.; Toropov, A. A.; Meltser, B. Ya.; Terent’ev, Ya. A.; Kyutt, R. N.; Sitnikova, A. A.; Semenov, A. N.; Ivanov, S. V.; Motlan; Goldys, E. M.; Kop’ev, P. S. // Semiconductors;Jul2002, Vol. 36 Issue 7, p816 

    Molecular beam epitaxy was used for the first time to grow novel GaAs/GaSb heterostructures with ultrathin (0.8-3 monolayers) GaAs layers embedded in GaSb. These structures were studied by X-ray diffraction, transmission electron microscopy, and photoluminescence. By contrast to known structures...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics