Ultrafast diffusion of a defect in indium-doped silicon introduced by chemomechanical polishing

Zundel, T.; Weber, J.; Benson, B.; Hahn, P. O.; Schnegg, A.; Prigge, H.
October 1988
Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1426
Academic Journal
The deactivation of the acceptor indium after chemomechanical polishing of p-type silicon is shown to result from the formation of a complex involving the indium atom and a positively charged, extremely fast-diffusing defect X. In the temperature range from 220 to 280 K, the dissociation frequency ν of this complex and the diffusion coefficient D of the defect X are thermally activated and satisfy the expressions ν=ν0 exp(-Ed/kT) and D=D0 exp(-Ea/kT) with ν0=2.6×1012 s-1, Ed=0.690 eV, D0=5×104 cm2/s, and Ea=0.665 eV.


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