TITLE

GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy

AUTHOR(S)
Lo, Y. H.; Deri, R. J.; Harbison, J.; Skromme, B. J.; Seto, M.; Hwang, D. M.; Lee, T. P.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1242
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The GaAs-on-InP heteroepitaxial waveguides are demonstrated for the first time using molecular beam epitaxy. A propagation loss of 9.3 dB/cm was obtained for waveguides grown on a 3° off (100) InP substrate. Compared to the 16 dB/cm loss for waveguides on (100) InP substrates, the waveguides on misoriented InP substrates exhibited a significantly lower loss. Based on photoluminescence studies, we attribute the propagation loss in both samples mainly to optical absorption by crystal defects. Defect densities of 4×1017 cm-3 and 2×1017 cm-3 are estimated for material on (100) and 3° off (100) substrates, respectively. Such heteroepitaxial waveguides may have applications in long-wavelength photonic integrated circuits.
ACCESSION #
9828334

 

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