TITLE

1.3 μm InGaAsP buried crescent lasers with cobalt-doped semi-insulating current blocking layers grown by metalorganic chemical vapor deposition

AUTHOR(S)
Cheng, W. H.; Pooladdej, J.; Huang, S. Y.; Buehring, K. D.; Appelbaum, A.; Wolf, D.; Renner, D.; Hess, K. L.; Zehr, S. W.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1257
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Cobalt-doped semi-insulating InP layers grown by low-pressure metalorganic chemical vapor deposition (LPMOCVD) have been used for the first time as a current blocking layer for 1.3 μm InGaAsP buried crescent lasers. Lasers with this cobalt-doped InP blocking layer have cw threshold currents as low as 8 mA at room temperature. This is the lowest cw threshold current yet reported for an InGaAsP laser with a semi-insulating current blocking layer. In addition, the lasers exhibit total differential quantum efficiency of 60%, high-temperature operation up to 100 °C, high output power of 30 mW/facet, and a 3-dB modulation bandwidth of 11.6 GHz. These results indicate that the cobalt-doped semi-insulating InP layer grown by LPMOCVD provides effective current blocking for high-performance lasers.
ACCESSION #
9828324

 

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