InGaAsP/InP buried-heterostructure lasers with concurrent fabrication of the stripes and mirrors

Yap, D.; Walpole, J. N.; Liau, Z. L.
October 1988
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1260
Academic Journal
Concurrent fabrication of InGaAsP/InP buried-heterostructure laser stripes and mirrors has been demonstrated by the use of dry etching and mass transport. In comparison to previous processes in which the laser stripes and mirrors are fabricated separately, this process offers the advantages of simplicity, built-in alignment, and improved control of device dimensions. Lasers with a cylindrical and a flat end mirror have threshold currents as low as 22 mA and differential quantum efficiencies as high as 24% per facet. Beam divergences as narrow as 13° are obtained for the cylindrical mirrors.


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