Titanium diffusion in silicon

Hocine, S.; Mathiot, D.
October 1988
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1269
Academic Journal
Titanium diffusion profiles in silicon were determined in the 950–1200 °C temperature range, with experimental conditions avoiding any oxygen or nitrogen contamination, which could perturb the boundary condition at the TiSi2/Si interface. Thus diffusivity values in the range 5×10-10–10-8 cm2 s-1 are obtained, and are about two orders of magnitude higher than previously reported.


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