Metallic behavior of lanthanum disilicide

Long, Robert G.; Bost, M. C.; Mahan, John E.
October 1988
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1272
Academic Journal
Polycrystalline thin films of LaSi2 were prepared by reaction of sputter-deposited lanthanum layers with silicon wafers. Samples of the low-temperature tetragonal and the high-temperature orthorhombic phases were separately obtained. The room-temperature intrinsic resistivities were 24 and 57 μΩ cm for the low- and high-temperature structures, respectively. Although lanthanum disilicide had been previously reported to be a semiconductor, we find classical metallic behavior for both phases.


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