Switching and memory phenomena in Langmuir–Blodgett films

Sakai, K.; Matsuda, H.; Kawada, H.; Eguchi, K.; Nakagiri, T.
October 1988
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1274
Academic Journal
Reproducible memory switching has been observed in metal/ Langmuir–Blodgett (LB) film/metal sandwich structures: LB films consist of organic molecules such as dyes having a number of conjugated bonds. The device switches from a nonconducting off state to a conducting on state via an intermediate state, and it switches directly from the on to the off state within less than 10 ns upon the application of a voltage. Both off-state and on-state resistances of the device depend linearly on the number of monolayers, the conduction being predominantly through the LB films.


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