TITLE

Elimination of light-induced effect in hydrogenated amorphous silicon

AUTHOR(S)
Chen, Yang-Fang
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1277
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Light-induced metastable defects in hydrogenated amorphous silicon can be eliminated by atomic hydrogen at the temperature below which the annealing effect occurs. The resulting material has a very high photosensitivity and stability.
ACCESSION #
9828311

 

Related Articles

  • Observation of enhanced infrared photoresponse in forward-biased amorphous silicon p-i-n diodes. Wind, J.; Muller, G. // Applied Physics Letters;8/19/1991, Vol. 59 Issue 8, p956 

    Investigates the photoconductive response of hydrogenated amorphous silicon p-i-n diodes under conditions of low-temperature operation. Impact of junction temperature on forward bias diode currents; Establishment of metastable charge carrier distribution; Role of wavelength in current enhancement.

  • Effect of midgap states in intrinsic hydrogenated amorphous silicon on sub-band-gap.... Lee, S.; Gunes, M.; Wronski, C.R.; Maley, N.; Bennett, M. // Applied Physics Letters;9/23/1991, Vol. 59 Issue 13, p1578 

    Presents a quantitative analysis of the effect of midgap states in intrinsic hydrogenated amorphous silicon on sub-band-gap photoconductivity. Consistency of the derived gap state parameters with the electron lifetimes; Spectral response of the sub-band-gap photoconductivity.

  • Observation of stable room-temperature photoconductivity in hydrogenated amorphous silicon.... Xi, J.; Macneil, J. // Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p1975 

    Investigates the stable room-temperature photoconductivity in hydrogenated amorphous silicon. Use of planar configuration for the photo- and dark-conductivity measurements; Use of the constant photocurrent method; Observation on the metastable midgap states.

  • Correlation of stress with light-induced defects in hydrogenated amorphous silicon films. Kurtz, Sarah R.; Tsuo, Y. Simon; Tsu, Raphael // Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p951 

    No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light-induced degradation in a...

  • Photoconductivity of nitrogen-modified bydrogenated tetrahedral amorphous carbon. Ilie, A.; Harel, O. // Journal of Applied Physics;1/15/2000, Vol. 87 Issue 2, p789 

    Presents information on a study which focused on the changes in the photoconductivity of hydrogenated tetrahedral amorphous carbon with nitrogen incorporation. Experimental details; Results and discussion; Conclusions.

  • The origin of current gain under illumination in amorphous silicon n-i-p-i-n structures. Chatterjee, P.; Vanderhaghen, R. // Journal of Applied Physics;2/15/2000, Vol. 87 Issue 4, p1874 

    Presents information on a study which examined the origin of the current gain under illumination in amorphous silicon n-i-p-i-n structures. Properties that can be used to measure the performance of a photoconductive detector in general; Simulation modeling of the amorphous silicon structures;...

  • A high voltage computer controlled experimental system for the investigation of amorphous semiconductors as image sensors. Vaezi-Nejad, S.M.; Jenner, R.P. // Transactions of the Institute of Measurement & Control;2002, Vol. 24 Issue 4, p303 

    This paper describes an ongoing programme of work designed to investigate dark discharge and photoconductivity in amorphous semiconductors with a view to applying these materials to industrial optical process tomography (OPT). Extensive laboratory equipment has been developed to investigate the...

  • Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealing. Kurova, I. A.; Ormont, N. N.; Terukov, E. I.; Trapeznikova, I. N.; Afanas’ev, V. P.; Gudovskikh, A. S. // Semiconductors;Mar2001, Vol. 35 Issue 3, p353 

    The electrical and photoelectric properties of layered a-Si:H films obtained by cyclic plasmochemical deposition and the effect of thermal annealing on these properties have been studied. Unannealed films demonstrate high photosensitivity, with a photoconductivity to dark conductivity ratio of K...

  • Determination of localized-state distributions in amorphous semiconductors from transient.... Naito, Hiroyoshi; Jinli Ding // Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1830 

    Investigates localized-state distributions in amorphous semiconductors from transient photoconductivity. Use of Laplace transforms to determine localized-state distribution; Application for the study of amorphous arsenic triselenide; Assumption of the unipolar conduction in amorphous...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics