Growth of highly strained InGaAs on GaAs

Price, G. L.
October 1988
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1288
Academic Journal
The early stages of the molecular beam epitaxial growth of InxGa1-xAs on GaAs have been studied with reflection high-energy electron diffraction. Measurement of the in-plane surface lattice constant as a function of film thickness clearly showed a pseudomorphic to incoherent transition. Changes in the diffraction streaks indicated a corresponding two- to three-dimensional growth transition. The results are compared with various models of dislocation nucleation and good support is found for heterogeneous misfit accommodation by 60° dislocations.


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