TITLE

Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator-semiconductor devices

AUTHOR(S)
Licoppe, C.; Moison, J. M.; Nissim, Y. I.; Regolini, J. L.; Bensahel, D.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1291
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The first stage of chemical vapor deposition of SiO2 from SiH4 and O2 on InP has been investigated. SiH4 is shown to interact only with an oxidized InP surface. It plays the part of an interface deoxidizing agent, restoring the covalent bonding of surface InP atoms. Oxygen originally bonded to InP becomes bonded to the silicon deposit in silica-like bonds. This phenomenon has been used as an in situ surface cleaning step in the processing of metal-insulator-semiconductor InP structures. It leads to a strong decrease of the hysteresis in capacitance-voltage curves, demonstrating improvement of the interface properties.
ACCESSION #
9828303

 

Related Articles

  • Heavily-doped n-type InP and InGaAs grown by metalorganic chemical vapor deposition using tetraethyltin. Pinzone, C. J.; Gerrard, N. D.; Dupuis, R. D.; Ha, N. T.; Luftman, H. S. // Journal of Applied Physics;6/1/1990, Vol. 67 Issue 11, p6823 

    Describes results of a study of the use tetraethyltin as a dopant source in the metalorganic chemical vapor deposition growth of indium phosphide and InGaAs and the realization of heavily doped n-type epitaxial layers. Crystal growth and characterization; Results and discussion; Conclusions.

  • Residual donor and acceptor incorporation in InP grown using trimethylindium and tertiarybutylphosphine. Watkins, S. P.; Nissen, M. K.; Haacke, G.; Handler, E. M. // Journal of Applied Physics;10/1/1992, Vol. 72 Issue 7, p2797 

    Examines the residual donor and acceptor species in a series of high purity n-type indium phosphide epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine and trimethylindium (TMIn). Experiment; Results.

  • Fabrication of Coaxial SiGe Heterostructure Nanowires by O Flow-Induced Bifurcate Reactions. Kim, Ilsoo; Lee, Ki-Young; Kim, Ungkil; Park, Yong-Hee; Park, Tae-Eon; Choi, Heon-Jin // Nanoscale Research Letters;Oct2010, Vol. 5 Issue 10, p1535 

    We report on bifurcate reactions on the surface of well-aligned SiGe nanowires that enable fabrication of two different coaxial heterostructure nanowires. The SiGe nanowires were grown in a chemical vapor transport process using SiCl gas and Ge powder as a source. After the growth of nanowires,...

  • Effects of oxygen on electron beam induced deposition of SiO2 using physisorbed and chemisorbed tetraethoxysilane. Bishop, James; Toth, Milos; Phillips, Matthew; Lobo, Charlene // Applied Physics Letters;11/19/2012, Vol. 101 Issue 21, p211605 

    Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O2 with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO2 at room temperature. Here, we show that O2 inhibits rather than...

  • Flatness improvement of InP using phosphine modulation metalorganic chemical vapor deposition. Lee, M.K.; Hu, C.C. // Applied Physics A: Materials Science & Processing;1997, Vol. 64 Issue 6, p589 

    From observations with an atomic force microscope, the flatness of InP homoepitaxial layer is improved to atomic scale by phosphine modulation metalorganic chemical vapor deposition. A full width at half maximum of 5.6 meV for photoluminescence at 77 K can be achieved under optimum growth...

  • Organometallic chemical vapor deposition and characterization of indium phosphide nanocrystals.... Hendershot, D. Greg; Gaskill, D. Kurt // Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3324 

    Examines the organometallic chemical vapor deposition of indium phosphide nanocrystals in Vycor porous glass by thermal reaction of trimethylindium with phosphine. Evaluation on the nonlinear optical properties of nanocrystalline composites; Use of Z-scan measurements; Details on the absorption...

  • Epitaxy of high resistivity InP on Si. Schnabel, R.F.; Krost, A. // Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3607 

    Demonstrates the low pressure metalorganic chemical vapor deposition of undoped and Fe-doped indium phosphide (InP) on vicinal Si(001) and Si(111). Observation on the incorporated Fe; Resistivity of the semi-insulating InP on Si(111); Correlation of resistivity to defect density in the InP:Fe...

  • InP on Si(111): Accommodation of lattice mismatch and structural properties. Krost, A.; Heinrichsdorff, F.; Bimberg, D.; Cerva, H. // Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p769 

    Examines the growth of indium phosphide (InP) on vicinal silicon (Si) by chemical vapor deposition. Use of heterostructures for electronic devices; Comparison of defect sensitivity between InP and GaAs; Use of Si as a substrate for InP-based structures.

  • Reduction of zinc diffusion into the collector of InP-based double heterojunction bipolar.... Bhat, R.; Koza, M.A. // Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p338 

    Examines the effect of emitter layers of indium phosphide (InP)-based double heterojunction bipolar transistors (DHBT) on zinc diffusion. Growth of DHBT by organometallic chemical vapor deposition; Dependence of zinc diffusion on the n-doping level of emitter; Introduction of AlInAs between the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics