TITLE

Windowless helium lamp assisted chemical vapor deposition of hydrogenated amorphous silicon

AUTHOR(S)
Zarnani, H.; Yu, Z. Q.; Collins, G. J.; Bhattacharya, E.; Pankove, J. I.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1314
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A windowless helium lamp is employed to assist chemical vapor deposition of hydrogenated amorphous silicon from disilane feedstock gas at a film growth rate greater than 200 Å/min. Material properties in this preliminary study are comparable to the best hydrogenated amorphous silicon (a-Si:H) films produced by conventional bulk plasma CVD techniques. The amount of photoconductivity degradation under long-time illumination is more than plasma-deposited a-Si-H thin films. Photoconductivity as high as σp =4×10-4 (Ω cm)-1 has been obtained.
ACCESSION #
9828292

 

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