Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

Kuech, T. F.; Tischler, M. A.; Wang, P.-J.; Scilla, G.; Potemski, R.; Cardone, F.
October 1988
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1317
Academic Journal
The controlled incorporation of carbon has been demonstrated for the metalorganic vapor phase epitaxy of GaAs. Carbon levels between 1016 and 1019 cm-3 can be achieved under typical growth conditions by using Ga(CH3)3 and either As(CH3)3 or mixtures of As(CH3)3 and AsH3. The carbon incorporation into GaAs goes through a minimum with growth temperature at ∼650 °C when using Ga(CH3)3 and As(CH3)3. The controlled addition of AsH3 monotonically decreases the carbon incorporation. The high carbon levels (>=1–2×1019 cm-3), greater than the reported solid solubility, are thermally stable with a low diffusion coefficient. The GaAs:C layers exhibit a low deep level concentration, ∼1013 cm-3, with only a single midgap trap present.


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