Reduction of degradation in vapor phase transported InP/InGaAsP mushroom stripe lasers

Jung, H.; Burkhardt, E. G.; Pfister, W.
October 1988
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1230
Academic Journal
The rapid degradation rate generally observed in InP/InGaAsP mushroom stripe lasers can be considerably decreased by regrowing the open sidewalls of the active stripe with low-doped InP in a second epitaxial step using the hydride vapor phase transport technique. This technique does not change the fundamental laser parameters like light-current and current-voltage characteristics. Because of this drastic reduction in degradation, the vapor phase epitaxy regrown InP/InGaAsP mushroom laser seems to be an interesting candidate for application in optical communication.


Related Articles

  • Orientation-dependent metalorganic vapor phase epitaxy regrowth on GaInAsP/InP laser structures. Fidorra, F.; Harde, P.; Venghaus, H.; Grützmacher, D. // Applied Physics Letters;9/25/1989, Vol. 55 Issue 13, p1321 

    GaInAsP/InP lasers made by low-pressure metalorganic vapor phase epitaxy regrowth on patterned surfaces exhibit yield and performance dependent on laser stripe orientation. Structures with stripes parallel to the <011> and <011> directions are investigated by secondary ion mass spectroscopy...

  • VCSEL SEES IMPROVED MIRROR TECHNOLOGY. Schweber, Bill // EDN;9/26/2002, Vol. 47 Issue 21, p26 

    Reports the potential production and test advantages of vertical-cavity surface emitting lasers VCSEL. Improvement of VCSEL on indium phosphide; Problem of making high-reflection-coefficient mirrors; Occurrence of fabrication hurdles.

  • InGaAsP/InP buried-heterostructure lasers with concurrent fabrication of the stripes and mirrors. Yap, D.; Walpole, J. N.; Liau, Z. L. // Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1260 

    Concurrent fabrication of InGaAsP/InP buried-heterostructure laser stripes and mirrors has been demonstrated by the use of dry etching and mass transport. In comparison to previous processes in which the laser stripes and mirrors are fabricated separately, this process offers the advantages of...

  • High-power, high-speed 1.3-μm semi-insulating-blocked distributed-feedback lasers. Koren, U.; Koch, T. L.; Corvini, P. J.; Miller, B. I.; Eisenstein, G.; Tucker, R. S.; Su, Y. K.; Capik, R. J. // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4785 

    Presents a study that described a high-performance indium-gallium arsenide phosphide/indium phosphide heterostructure laser. Features of the laser; Details of the fabrication of the laser; Analysis of the spectral properties of the laser.

  • High-speed 1.3-μm InGaAsP buried crescent lasers with Fe-doped InP current blocking layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine. Huang, Rong-Ting; Keo, S.; Cheng, W. H.; Wolf, D.; Buehring, K. D.; Agarwal, R.; Jiang, C.-L.; Renner, Daniel // Journal of Applied Physics;1/15/1992, Vol. 71 Issue 2, p1061 

    Focuses on a study conducted on iron-doped semi-insulating indium phosphide layers grown by low-pressure organometallic vapor phase epitaxy with tertiarybutylphosphine used as current block layer for high speed indium-gallium-arsenic-phophorus buried crescent lasers. Methods used to improve...

  • Lasing operation up to 200 K in the wavelength range of 570-590 nm by GaInP/AlGaInP.... Tanaka, T.; Uchida, K. // Applied Physics Letters;2/13/1995, Vol. 66 Issue 7, p783 

    Examines short-wavelength stimulated emission from a GaInP/AlGaInP double-heterostructure grown on GaAs[sub 0.6]P[sub 0.4] substrates. Obtainment of laser oscillation at wavelength below 590 nm; Application of high-reflectivity coating on cavity facets to decrease optical mirror loss; Exhibition...

  • InP/InGaAsP lasers with broad area double heterostructure lasers as back-face monitors. Segner, B. P.; Koszi, L. A.; Temkin, H.; Flynn, E. J.; Ketelsen, L. J. P.; Napholtz, S. G.; Przybylek, G. J. // Journal of Applied Physics;10/1/1988, Vol. 64 Issue 7, p3718 

    Presents an indium phosphide/InGaAsP laser-monitor hybrid structure which demonstrates the use of broad area double heterostructure devices as edge-detecting back-face monitors. Linear relationship between photocurrent and light output from the laser; Types of devices used as back-face...

  • Excimer laser-induced deposition of InP: Crystallographic and mechanistic studies. Donnelly, V. M.; Brasen, D.; Appelbaum, A.; Geva, M. // Journal of Applied Physics;9/1/1985, Vol. 58 Issue 5, p2022 

    Deals with a study which investigated the mechanism and crystallinity of excimer laser-induced deposition of indium phosphide. Information on excimer laser; Methodology of the study; Results and discussion.

  • Low-loss hydrogenated buried waveguide coupler integrated with a four-wavelength distributive.... Allovon, M.; Talneau, A. // Applied Physics Letters;9/29/1997, Vol. 71 Issue 13, p1750 

    Describes a method of realizing low-loss buried waveguide integrated sources with four-wavelength distributive Bragg reflector laser array on indium phosphide. Development of wavelength division multiplexed networks; Observation of multiwavelength sources emitting in the spectral window of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics