TITLE

Reduction of degradation in vapor phase transported InP/InGaAsP mushroom stripe lasers

AUTHOR(S)
Jung, H.; Burkhardt, E. G.; Pfister, W.
PUB. DATE
October 1988
SOURCE
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1230
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The rapid degradation rate generally observed in InP/InGaAsP mushroom stripe lasers can be considerably decreased by regrowing the open sidewalls of the active stripe with low-doped InP in a second epitaxial step using the hydride vapor phase transport technique. This technique does not change the fundamental laser parameters like light-current and current-voltage characteristics. Because of this drastic reduction in degradation, the vapor phase epitaxy regrown InP/InGaAsP mushroom laser seems to be an interesting candidate for application in optical communication.
ACCESSION #
9828263

 

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