Diluted magnetic semiconductor (Cd1-xMnxTe) Schottky diodes and field-effect transistors

Dreifus, D. L.; Kolbas, R. M.; Harper, R. L.; Tassitino, J. R.; Hwang, S.; Schetzina, J. F.
October 1988
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1279
Academic Journal
We report the first demonstration of electronic devices, Schottky diodes, and metal-semiconductor field-effect transistors, in a diluted magnetic semiconductor Cd1-xMnxTe. These devices were fabricated using n-type, indium-doped CdMnTe films grown by photoassisted molecular beam epitaxy on (100) CdTe and CdZnTe substrates. Epitaxial layers with carrier concentrations of 1×1017 cm-3 and electron mobilities as large as 720 cm2/V s at 120 K were used. The Schottky diodes have turn-on voltages of 0.8 V, idealities in the range between 1.27 and 1.7, and reverse breakdown voltages from 5.5 to 10.5 V reverse bias. The 100 μm gate length transistors have transconductances of 1 mS/mm.


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