Strained-layer Ga1-xInxAs/InP avalanche photodetectors

Gershoni, D.; Temkin, H.; Panish, M. B.
October 1988
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1294
Academic Journal
We have investigated the electrical and optical properties of avalanche photodiodes with the absorption region formed by Ga1-x InxAs/InP strained-layer superlattices. High quality structures with the In concentration x as high as 1 have been grown by gas source molecular beam epitaxy. We have extended the photodiode response to approximately 2 μm and obtained avalanche gain of 16. The spectral range accessible with these strained-layer devices is carefully modeled.


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