Unified model for impurity diffusion in silicon

Orlowski, M.
October 1988
Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1323
Academic Journal
A new theoretical framework for impurity diffusion in silicon is proposed. The basic mechanism employed here is the point defect-impurity pair diffusion as presented by Mulvaney and Richardson [Appl. Phys. Lett. 51, 1439 (1987)] in a generalized description of the impurity-interstitial model by Morehead and Lever [Appl. Phys. Lett. 48, 151 (1986)]. The model consists of coupled equations for the impurities and point defects, in which all species including structural defects (major new process variables) are treated on the same footing. Among other things, the model accounts for long-range point defect mediated enhancement and retardation of the diffusion. The essential features of the present formalism are the new equations for interstitials and vacancies which provide the major coupling between the impurities apart from the coupling via the Fermi level. This approach allows, for the first time, a consistent analysis and exploration of the diffusion phenomena step by step on various levels of complexity.


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